YANGJIE MG75P12E2

YANGJIE · Thyristors & Power Discretes · MPN MG75P12E2

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Specifications

Pd - Power Dissipation476W
Td(off)380ns
Td(on)100ns
Operating Temperature-40℃~+150℃
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)300pF
Input Capacitance(Cies)4nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V@2.6mA
Gate Charge(Qg)780nC
Vce Saturation(VCE(sat))2.15V@75A,15V
Switching Energy(Eoff)3.6mJ

Technical details

476W 75A 1.2kV E2 Single IGBTs RoHS

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