YANGJIE · Thyristors & Power Discretes · MPN MG75P12E2
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| Pd - Power Dissipation | 476W |
|---|---|
| Td(off) | 380ns |
| Td(on) | 100ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 75A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 300pF |
| Input Capacitance(Cies) | 4nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@2.6mA |
| Gate Charge(Qg) | 780nC |
| Vce Saturation(VCE(sat)) | 2.15V@75A,15V |
| Switching Energy(Eoff) | 3.6mJ |
476W 75A 1.2kV E2 Single IGBTs RoHS