OSEN OGH25T120

OSEN · Thyristors & Power Discretes · MPN OGH25T120

5.0/5 from 1 engineer review.

Specifications

Td(off)198ns
Td(on)34ns
Current - Collector(Ic)25A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)47pF
Input Capacitance(Cies)2.375nF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@0.25mA
Gate Charge(Qg)142nC@960V
Output Capacitance(Coes)64pF
Vce Saturation(VCE(sat))2.5V@25A,15V
Collector Cut-Off Current (Ices)1mA

Technical details

IGBT 1.2kV 25A Through Hole TO-3PNB

Reviews

Related Thyristors & Power Discretes