Infineon · Thyristors & Power Discretes · MPN FS75R12KE3G
5.0/5 from 1 engineer review.
| Pd - Power Dissipation | 355W |
|---|---|
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 5.3nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,75A |
| Operating Temperature | -40℃~+125℃ |
355W 100A 1.2kV IGBT Modules RoHS