YANGJIE · Thyristors & Power Discretes · MPN MG50P12E1A
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| Pd - Power Dissipation | 288W |
|---|---|
| Td(off) | 160ns |
| Td(on) | 41ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 2.6nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1.7mA |
| Gate Charge(Qg) | 350nC |
| Vce Saturation(VCE(sat)) | 1.9V@50A,15V |
| Switching Energy(Eoff) | 3.39mJ |
| Turn-On Energy (Eon) | 5.92mJ |
IGBT 1.2kV 50A 288W E1A