YANGJIE · Thyristors & Power Discretes · MPN MG40P12E1
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| Pd - Power Dissipation | 227W |
|---|---|
| Td(off) | 151ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 31ns |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 2.25nF@25V,0V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1.2mA |
| Gate Charge(Qg) | 0.35uC |
| Vce Saturation(VCE(sat)) | 2.05V@40A,15V |
| Switching Energy(Eoff) | 2.64mJ |
| Turn-On Energy (Eon) | 3.97mJ |
IGBT 1.2kV 40A 227W Through Hole E1