YANGJIE · Thyristors & Power Discretes · MPN MG35P12P3
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| Td(off) | 141ns |
|---|---|
| Pd - Power Dissipation | 210W |
| Td(on) | 20ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 35A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 87pF |
| Input Capacitance(Cies) | 2.5nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Vce Saturation(VCE(sat)) | 1.82V |
| Collector Cut-Off Current (Ices) | 1mA |
| Switching Energy(Eoff) | 1.95mJ |
210W 35A 1.2kV Single IGBTs RoHS