YANGJIE · Thyristors & Power Discretes · MPN MG35P12E1A
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| Td(off) | 141ns |
|---|---|
| Pd - Power Dissipation | 227W |
| Td(on) | 20ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 35A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 2.5nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1.2mA |
| Gate Charge(Qg) | 270nC |
| Vce Saturation(VCE(sat)) | 2.35V@35A,15V |
| Switching Energy(Eoff) | 1.95mJ |
| Turn-On Energy (Eon) | 4.45mJ |
IGBT 1.2kV 35A 227W E1A