YANGJIE · Thyristors & Power Discretes · MPN MG25P12P3
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| Td(off) | 82ns |
|---|---|
| Pd - Power Dissipation | 165W |
| Td(on) | 10ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 56pF |
| Input Capacitance(Cies) | 1.67nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1.2mA |
| Vce Saturation(VCE(sat)) | 2.5V@25A,15V |
| Gate Charge(Qg) | 200nC |
| Switching Energy(Eoff) | 1.13mJ |
165W 25A 1.2kV Single IGBTs RoHS