YANGJIE · Thyristors & Power Discretes · MPN MG25P12E1
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| Pd - Power Dissipation | 166W |
|---|---|
| Td(off) | 104ns |
| Td(on) | 16ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 1.45nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1.2mA |
| Vce Saturation(VCE(sat)) | 1.9V@25A,15V |
| Gate Charge(Qg) | 200nC |
| Switching Energy(Eoff) | 1.68mJ |
| Turn-On Energy (Eon) | 2.58mJ |
IGBT 1.2kV 25A 166W Through Hole,107.5x45mm