YANGJIE MG200HF12TLC2

YANGJIE · Thyristors & Power Discretes · MPN MG200HF12TLC2

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Specifications

Pd - Power Dissipation1.25kW
Td(off)266ns
Td(on)187ns
Operating Temperature-40℃~+150℃
Current - Collector(Ic)200A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)500pF
IGBT TypeIGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@7.6mA
Vce Saturation(VCE(sat))2.2V@200A,15V
Switching Energy(Eoff)12.9mJ
Turn-On Energy (Eon)21.1mJ

Technical details

1.25kW 200A 1.2kV IGBT Module Single IGBTs RoHS

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