YANGJIE MG150HF12TLC1

YANGJIE · Thyristors & Power Discretes · MPN MG150HF12TLC1

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Specifications

Td(off)229ns
Pd - Power Dissipation960W
Td(on)124ns
Operating Temperature-40℃~+150℃
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)480pF
Input Capacitance(Cies)14.5nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.2V@5mA
Vce Saturation(VCE(sat))2.2V@150A,15V
Switching Energy(Eoff)10.2mJ
Turn-On Energy (Eon)10.4mJ

Technical details

960W 150A 1.2kV Single IGBTs RoHS

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