YANGJIE · Thyristors & Power Discretes · MPN MG150HF12TFC2
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| Pd - Power Dissipation | 1.15kW |
|---|---|
| Td(off) | 350ns |
| Td(on) | 325ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 500pF |
| Input Capacitance(Cies) | 11nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@4mA |
| Vce Saturation(VCE(sat)) | 2.1V@150A,15V |
| Gate Charge(Qg) | 1.56uC |
| Switching Energy(Eoff) | 6.8mJ |
1.15kW 150A 1.2kV C2 Single IGBTs RoHS