YANGJIE · Thyristors & Power Discretes · MPN MG150HF12MIC2
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| Td(off) | 226ns |
|---|---|
| Pd - Power Dissipation | 1kW |
| Td(on) | 116ns |
| Current - Collector(Ic) | 210A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 420pF |
| Input Capacitance(Cies) | 10nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@4mA |
| Vce Saturation(VCE(sat)) | 2.1V@150A,15V |
| Gate Charge(Qg) | 275nC@15V |
| Reverse Recovery Time(trr) | 180ns |
| Switching Energy(Eoff) | 8.6mJ |
1kW 210A 1.2kV Screw Terminals Single IGBTs RoHS