YANGJIE · Thyristors & Power Discretes · MPN MG150HF12LEC2
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| Pd - Power Dissipation | 960W |
|---|---|
| Td(off) | 390ns |
| Operating Temperature | -40℃~+125℃ |
| Td(on) | 133ns |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 600pF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@6mA |
| Vce Saturation(VCE(sat)) | 3.4V@150A,15V |
| Switching Energy(Eoff) | 5.1mJ |
| Turn-On Energy (Eon) | 23.3mJ |
960W 150A 1.2kV NPT (Non-Punch Through) Single IGBTs RoHS