YANGJIE · Thyristors & Power Discretes · MPN MG10P12P2
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| Pd - Power Dissipation | 100W |
|---|---|
| Td(off) | 100ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 76ns |
| Current - Collector(Ic) | 10A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 23pF |
| Input Capacitance(Cies) | 681pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@0.5mA |
| Gate Charge(Qg) | 130nC |
| Vce Saturation(VCE(sat)) | 2.5V@10A,15V |
| Switching Energy(Eoff) | 780uJ |
100W 10A 1.2kV P2 Single IGBTs RoHS