YANGJIE MG100P12E2

YANGJIE · Thyristors & Power Discretes · MPN MG100P12E2

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Specifications

Td(off)395ns
Pd - Power Dissipation625W
Operating Temperature-40℃~+125℃
Td(on)240ns
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)400pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@4mA
Vce Saturation(VCE(sat))2.25V@100A,15V
Reverse Recovery Time(trr)85ns
Switching Energy(Eoff)7.3mJ
Turn-On Energy (Eon)4.1mJ

Technical details

625W 100A 1.2kV E2 Single IGBTs RoHS

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