YANGJIE · Thyristors & Power Discretes · MPN MG100HF12TLC1
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| Td(off) | 232ns |
|---|---|
| Pd - Power Dissipation | 785W |
| Td(on) | 129ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 270pF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@4mA |
| Vce Saturation(VCE(sat)) | 2.2V@100A,15V |
| Switching Energy(Eoff) | 6.7mJ |
| Turn-On Energy (Eon) | 6.2mJ |
785W 100A 1.2kV IGBT Module Single IGBTs RoHS