YANGJIE DGW75N65CTS2A

YANGJIE · Thyristors & Power Discretes · MPN DGW75N65CTS2A

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Specifications

Pd - Power Dissipation428W
Td(off)121ns
Td(on)32ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)85A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)40pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.2V@0.75mA
Vce Saturation(VCE(sat))1.75V@75A,15V
Reverse Recovery Time(trr)160ns
Switching Energy(Eoff)1.11mJ
Turn-On Energy (Eon)3.12mJ

Technical details

428W 85A 650V TO-247 Single IGBTs RoHS

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