YANGJIE DGW40N120CTLQ

YANGJIE · Thyristors & Power Discretes · MPN DGW40N120CTLQ

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Specifications

Pd - Power Dissipation428W
Td(off)180ns
Td(on)45ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)2.5nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.8V@1.4mA
Vce Saturation(VCE(sat))2.4V@40A,15V
Gate Charge(Qg)0.33uC@15V
Reverse Recovery Time(trr)439ns
Switching Energy(Eoff)1.7mJ

Technical details

IGBT 1.2kV 80A 428W Through Hole TO-247

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