YANGJIE DGW30N65CTL

YANGJIE · Thyristors & Power Discretes · MPN DGW30N65CTL

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Specifications

Td(off)120ns
Pd - Power Dissipation187W
Td(on)40ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)0.05nF
Input Capacitance(Cies)1.14nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.1V@0.43mA
Gate Charge(Qg)0.15uC@15V
Vce Saturation(VCE(sat))2.15V@30A,15V
Switching Energy(Eoff)400uJ

Technical details

187W 30A 650V TO-247 Single IGBTs RoHS

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