YANGJIE DGW10N120CTL

YANGJIE · Thyristors & Power Discretes · MPN DGW10N120CTL

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Specifications

Pd - Power Dissipation157W
Td(off)262ns
Td(on)85ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)20A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)35pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@500uA
Vce Saturation(VCE(sat))2.2V@10A,15V
Gate Charge(Qg)80nC@15V
Switching Energy(Eoff)480uJ

Technical details

157W 20A 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS

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