YANGJIE · Thyristors & Power Discretes · MPN DGF10N65CTL0
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| Pd - Power Dissipation | 100W |
|---|---|
| Td(off) | 68ns |
| Td(on) | 10ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 890pF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Vce Saturation(VCE(sat)) | 1.7V@10A,15V |
| Switching Energy(Eoff) | 170uJ |
| Turn-On Energy (Eon) | 360uJ |
IGBT 650V 20A 100W Through Hole TO-220F