Wuxi China Resources Huajing Microelectronics · Thyristors & Power Discretes · MPN BT25T120CKR
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| Pd - Power Dissipation | 208W |
|---|---|
| Td(off) | 198ns |
| Operating Temperature | - |
| Td(on) | 34ns |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@250uA |
| Vce Saturation(VCE(sat)) | 1.95V@25A,15V |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 950uJ |
| Turn-On Energy (Eon) | 1.88mJ |
208W 50A 1.2kV TO-247-3 Single IGBTs RoHS