VISHAY · Thyristors & Power Discretes · MPN VS-GT80DA120U
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| Pd - Power Dissipation | 658W |
|---|---|
| Current - Collector(Ic) | 139A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 4.4nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.55V@15V,80A |
| Operating Temperature | -40℃~+150℃@(Tj) |
658W 139A 1.2kV SOT-227 IGBT Modules RoHS