VISHAY VS-GT80DA120U

VISHAY · Thyristors & Power Discretes · MPN VS-GT80DA120U

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Specifications

Pd - Power Dissipation658W
Current - Collector(Ic)139A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)4.4nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.55V@15V,80A
Operating Temperature-40℃~+150℃@(Tj)

Technical details

658W 139A 1.2kV SOT-227 IGBT Modules RoHS

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