VISHAY VS-GT55LA120UX

VISHAY · Thyristors & Power Discretes · MPN VS-GT55LA120UX

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Specifications

Pd - Power Dissipation291W
Current - Collector(Ic)68A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-40℃~+150℃@(Tj)

Technical details

291W 68A 1.2kV SOT-227 IGBT Modules RoHS

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