VISHAY · Thyristors & Power Discretes · MPN VS-GT300YH120N
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| Pd - Power Dissipation | - |
|---|---|
| Current - Collector(Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.17V@15V,300A(Typ) |
| Operating Temperature | -40℃~+150℃@(Tj) |
1.2kV IGBT Modules RoHS