VISHAY VS-GT250SA60S

VISHAY · Thyristors & Power Discretes · MPN VS-GT250SA60S

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Specifications

Pd - Power Dissipation750W;425W
Td(off)539ns
Td(on)469ns
Current - Collector(Ic)250A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)84pF
Input Capacitance(Cies)24.2nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.9V
Gate Charge(Qg)909nC@15V
Vce Saturation(VCE(sat))1.16V
Output Capacitance(Coes)300pF
Switching Energy(Eoff)6.65mJ

Technical details

250A 600V SOT-227 IGBT Modules RoHS

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