VISHAY VS-GT180DA120U

VISHAY · Thyristors & Power Discretes · MPN VS-GT180DA120U

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Specifications

Td(off)334ns
Pd - Power Dissipation1.087kW
Td(on)192ns
Current - Collector(Ic)281A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)350pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.75V@5.7mA
Operating Temperature-40℃~+150℃
Vce Saturation(VCE(sat))2.05V@100A,15V
Reverse Recovery Time(trr)163ns
Switching Energy(Eoff)7.3mJ

Technical details

1.087kW 281A 1.2kV FS (Field Stop) SOT-227 IGBT Modules RoHS

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