TOSHIBA GT60M324(Q)

TOSHIBA · Thyristors & Power Discretes · MPN GT60M324(Q)

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Specifications

Pd - Power Dissipation254W
Td(off)-
Operating Temperature-
Td(on)-
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)900V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)7.5V@60mA
Vce Saturation(VCE(sat))1.7V@60A,15V
Reverse Recovery Time(trr)800ns
Switching Energy(Eoff)-
Turn-On Energy (Eon)-

Technical details

254W 60A 900V TO-3P-3 Single IGBTs RoHS

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