TOSHIBA GT50N322A

TOSHIBA · Thyristors & Power Discretes · MPN GT50N322A

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Specifications

Td(off)-
Pd - Power Dissipation156W
Operating Temperature-
Td(on)-
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1kV
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Reverse Recovery Time(trr)-
Switching Energy(Eoff)-
Turn-On Energy (Eon)-

Technical details

156W 50A 1kV SC-65-3 Single IGBTs RoHS

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