TOSHIBA · Thyristors & Power Discretes · MPN GT50JR22(STA1,E,S)
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| Td(off) | 330ns |
|---|---|
| Pd - Power Dissipation | 230W |
| Operating Temperature | - |
| Td(on) | 250ns |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@15V,50A |
| Vce Saturation(VCE(sat)) | 2.2V@50A,15V |
| Collector Cut-Off Current (Ices) | 1mA |
| Reverse Recovery Time(trr) | 350ns |
| Switching Energy(Eoff) | - |
IGBT 600V 50A 230W Through Hole SC-65-3