TOSHIBA GT50JR21(STA1,E,S)

TOSHIBA · Thyristors & Power Discretes · MPN GT50JR21(STA1,E,S)

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Specifications

Td(off)-
Pd - Power Dissipation230W
Operating Temperature-
Td(on)-
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Switching Energy(Eoff)-
Turn-On Energy (Eon)-

Technical details

230W 50A 600V SC-65-3 Single IGBTs RoHS

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