TOSHIBA · Thyristors & Power Discretes · MPN GT50J341,Q
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| Td(off) | - |
|---|---|
| Pd - Power Dissipation | 200W |
| Operating Temperature | - |
| Td(on) | - |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
200W 50A 600V SC-65-3 Single IGBTs RoHS