TOSHIBA · Thyristors & Power Discretes · MPN GT30N135SRA,S1E
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| Td(off) | - |
|---|---|
| Pd - Power Dissipation | 348W |
| Operating Temperature | - |
| Td(on) | - |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 270nC |
| Switching Energy(Eoff) | 1.3mJ |
| Turn-On Energy (Eon) | - |
348W 60A 1.35kV TO-247 Single IGBTs RoHS