TOSHIBA GT30J122A(STA1,E,D

TOSHIBA · Thyristors & Power Discretes · MPN GT30J122A(STA1,E,D

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Specifications

Pd - Power Dissipation120W
Td(off)500ns
Td(on)300ns
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)2.5nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6V
Vce Saturation(VCE(sat))2.8V@50A,15V
Collector Cut-Off Current (Ices)1mA

Technical details

120W 30A 600V TO-3PN Single IGBTs RoHS

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