TOSHIBA · Thyristors & Power Discretes · MPN GT30J121(Q)
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| Td(off) | 300ns |
|---|---|
| Pd - Power Dissipation | 170W |
| Td(on) | 90ns |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.45V@15V,30A |
| Switching Energy(Eoff) | 800uJ |
| Turn-On Energy (Eon) | 1mJ |
170W 30A 600V TO-3P(N) Single IGBTs RoHS