TOSHIBA · Thyristors & Power Discretes · MPN GT20N135SRA,S1E
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| Td(off) | - |
|---|---|
| Pd - Power Dissipation | 312W |
| Operating Temperature | - |
| Td(on) | - |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 185nC |
| Turn-On Energy (Eon) | - |
312W 40A 1.35kV TO-247 Single IGBTs RoHS