TI IGTH20N40D

TI · Thyristors & Power Discretes · MPN IGTH20N40D

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Specifications

Operating Temperature-
Current - Collector(Ic)20A
Collector-Emitter Breakdown Voltage (Vces)400V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Turn-On Energy (Eon)-

Technical details

20A 400V TO-218 Single IGBTs RoHS

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