TI HGTP7N60B3D

TI · Thyristors & Power Discretes · MPN HGTP7N60B3D

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Specifications

Pd - Power Dissipation60W
Td(off)-
Td(on)26ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)14A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)-
Reverse Recovery Time(trr)37ns

Technical details

60W 14A 600V TO-220AB Single IGBTs

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