TI · Thyristors & Power Discretes · MPN HGTP6N40E1D
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| Pd - Power Dissipation | - |
|---|---|
| Td(off) | - |
| Td(on) | - |
| Operating Temperature | - |
| Current - Collector(Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 400V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 6.9nC |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
400V TO-220 Single IGBTs