TI · Thyristors & Power Discretes · MPN HGTP3N60C3
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| Pd - Power Dissipation | 33W |
|---|---|
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 6A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 17.3nC |
| Turn-On Energy (Eon) | - |
33W 6A 600V TO-220AB Single IGBTs