TI HGTP15N50C1

TI · Thyristors & Power Discretes · MPN HGTP15N50C1

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Specifications

Pd - Power Dissipation75W
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)15A
Collector-Emitter Breakdown Voltage (Vces)500V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)33nC
Turn-On Energy (Eon)-

Technical details

75W 15A 500V TO-220 Single IGBTs

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