TI · Thyristors & Power Discretes · MPN HGTP15N40C1
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| Pd - Power Dissipation | 75W |
|---|---|
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 15A |
| Collector-Emitter Breakdown Voltage (Vces) | 400V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@20V,35A |
| Gate Charge(Qg) | 33nC |
| Turn-On Energy (Eon) | - |
75W 15A 400V TO-220 Single IGBTs