TI · Thyristors & Power Discretes · MPN HGTH20N50E1D
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| Pd - Power Dissipation | 100W |
|---|---|
| Td(off) | - |
| Td(on) | - |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 500V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@20V,35A |
| Gate Charge(Qg) | 33nC |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
100W 20A 500V TO-218 Single IGBTs