TI · Thyristors & Power Discretes · MPN HGTH12N50C1D
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| Pd - Power Dissipation | 75W |
|---|---|
| Td(off) | - |
| Operating Temperature | - |
| Td(on) | - |
| Current - Collector(Ic) | 12A |
| Collector-Emitter Breakdown Voltage (Vces) | 500V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@20V,17.5A |
| Gate Charge(Qg) | 19nC |
| Reverse Recovery Time(trr) | 100ns |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
75W 12A 500V TO-218 Single IGBTs