TI · Thyristors & Power Discretes · MPN HGTG30N60C3
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| Td(off) | 320ns |
|---|---|
| Pd - Power Dissipation | - |
| Td(on) | 40ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 63A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.8V@15V,30A |
| Gate Charge(Qg) | 250nC |
| Switching Energy(Eoff) | 2.5mJ |
| Turn-On Energy (Eon) | 1.05mJ |
63A 600V SUPER-247(TO-274AA) Single IGBTs