TI · Thyristors & Power Discretes · MPN HGTG20N100D2
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| Pd - Power Dissipation | - |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 34A |
| Collector-Emitter Breakdown Voltage (Vces) | 1kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@10V,20A |
| Gate Charge(Qg) | 163nC |
| Turn-On Energy (Eon) | - |
34A 1kV TO-247 Single IGBTs