TI · Thyristors & Power Discretes · MPN HGTG12N60C3DR
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| Pd - Power Dissipation | 104W |
|---|---|
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 24A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 340uJ |
| Turn-On Energy (Eon) | 400uJ |
104W 24A 600V TO-247 Single IGBTs