TI · Thyristors & Power Discretes · MPN HGTD10N40F1S
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| Pd - Power Dissipation | 75W |
|---|---|
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 12A |
| Collector-Emitter Breakdown Voltage (Vces) | 400V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 13.4nC |
| Turn-On Energy (Eon) | - |
75W 12A 400V TO-252(DPAK) Single IGBTs