TI · Thyristors & Power Discretes · MPN HGTB12N60D1C
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| Pd - Power Dissipation | - |
|---|---|
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 12A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.7V@15V,10A |
| Turn-On Energy (Eon) | - |
12A 600V TO-220-5 Single IGBTs